Phasenwechselspeicherzelle mit einem Heizelement mit Aktiviertem Temperaturwiderstand und Speicherinterne Rechenschaltung mit einer Solchen Phasenwechselspeicherzelle

Details

Veröffentlichungs-Nr.

EP4750301

Anmeldetag

6. November 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

IPC

H10N70/00, H10B63/10

Abstract

A phase change memory (PCM) cell includes a phase change material region and a heater element coupled to phase change material region. The heater element is made of an electrically conductive material having an activated resistance in temperature property. The electrically conductive material of the heater element is an alloy having a silicon content in a range of 14-19%. The alloy for the conductive material of the heater element is deposited by an atomic layer deposition process in a conformal layer having a substantially constant thickness.

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz