Speicheranordnung mit Seitlich Geformten Speicherzellen

Details

Veröffentlichungs-Nr.

EP4750302

Anmeldetag

13. Mai 2022

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

IPC

H10N70/20

Abstract

A method, comprising:forming a channel in a sidewall of a material stack, the channel being bounded by a first dielectric layer, a second dielectric layer, and a conductive layer of the material stack;depositing, into the channel over the conductive layer and via a trench by the sidewall of the material stack, a first material associated with a first electrode;depositing, into the channel over the first material and via the trench, a second material associated with a storage element, wherein a first side of the first material is covered by the second material and a first side of the second material is exposed to the trench based at least in part on depositing the second material;depositing, into the channel over the second material and via the trench, a third material associated with a second electrode, wherein the first side of the second material is covered and a first side of the third material is exposed to the trench based at least in part on depositing the third material;forming, through the first, second, and third materials, an opening that exposes a second side of the second material; andreplacing, via the opening, the second material with a chalcogenide material based at least in part on exposing the second side of the second material.

Anmelder

Firma

MICRON TECHNOLOGY, INC.

Land

🇺🇸 USA

Fachgebiete