Verfahren zur Verbesserung der Gleichförmigkeit Optischer Eigenschaften einer Dünnschichtvorrichtung
Anmelder: Avago Technologies International Sales Pte. Limited 🇸🇬
Details
- Veröffentlichungs-Nr.
- EP4750305
- Anmeldetag
- 26. Juli 2024
- Veröffentlichung
- 27. Mai 2026
- Rechtsraum
- EP
- IPC
- H10P74/00, H10P74/20H10P74/00
Abstract
A method for improving wafer-level optical characteristic uniformity. The method includes forming a first layer of dielectric overlying the first wafer and a second layer of dielectric overlying the second wafer. The method also includes measuring a refractive index distribution of the second layer and measuring a first thickness distribution of the first layer. The method also includes determining a second thickness distribution for the first layer based on the refractive index distribution and the first thickness distribution. The method further includes removing material nonuniformly and selectively from the first layer based on the second thickness distribution, resulting in a third layer in the second thickness distribution characterized by a spectral response with a characteristic wavelength uniformity better than +/- 2.5 nm across the first wafer.
Anmelder
- Firma
- Avago Technologies International Sales Pte. Limited
- Land
- 🇸🇬 Singapur
Singapurische Vertriebsgesellschaft des Halbleiterkonzerns Avago Technologies (heute Broadcom), tätig im internationalen Vertrieb von Halbleiterkomponenten für Kommunikations-, Industrie- und Speicheranwendungen.
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