Verfahren zur Substratverarbeitung, Verfahren zur Herstellung eines Halbleiterbauelements, Substratverarbeitungsvorrichtung und Programm

Details

Veröffentlichungs-Nr.

EP4752257

Anmeldetag

27. November 2025

Veröffentlichung

3. Juni 2026

Rechtsraum

EP

IPC

C23C16/455

Abstract

A technique includes a supply process including: (a0) supplying a process gas into a process chamber (201) in which a substrate (200) including a recess on a surface of the substrate (200) is placed; (a1) increasing an internal pressure of the process chamber (201) at least partially simultaneously with (a0); (a2) decreasing the internal pressure of the process chamber (201); and (b) supplying a dilution gas into the process chamber (201) or increasing a flow rate of the dilution gas supplied into the process chamber (201), the supply process being performed so that the internal pressure of the process chamber (201) reaches one or more local maximum values; and an exhaust process of exhausting an interior of the process chamber (201) during at least a portion of the supply process, wherein, in the supply process, (b) is started before (a2) ends for a first time.

Anmelder

Firma

Kokusai Electric Corporation

Land

🇯🇵 Japan

Fachgebiete