Konische Speicherzellenprofile
Anmelder: MICRON TECHNOLOGY, INC. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4752883
- Anmeldetag
- 29. Januar 2019
- Veröffentlichung
- 3. Juni 2026
- Rechtsraum
- EP
- IPC
- G11C13/00
Abstract
A memory device, comprising: a self-selecting memory component comprising a top surface having a first top length and a bottom surface having a first bottom length less than the first top length in a first direction, the top surface having a second top length and the bottom surface having a second bottom length in a second direction, the second direction different than the first direction, wherein the second top length of the top surface is greater than the second top length of the bottom surface in the second direction; top electrode coupled with the top surface of the self-selecting memory component; and a bottom electrode coupled with the bottom surface of the self-selecting memory component and in electronic communication with the top electrode via the self-selecting memory component.
Anmelder
- Firma
- MICRON TECHNOLOGY, INC.
- Land
- 🇺🇸 USA
US-amerikanisches Halbleiterunternehmen mit Sitz in Boise, Idaho. Micron entwickelt und fertigt Speicherchips wie DRAM und NAND-Flash sowie Speicherlösungen für Computer, Mobilgeräte, Rechenzentren und Automobile.
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