Hv-Bcd-Technologie mit Dti-Strukturen

Details

Veröffentlichungs-Nr.

EP4753437

Anmeldetag

28. Oktober 2025

Veröffentlichung

3. Juni 2026

Rechtsraum

EP

Abstract

An integrated circuit is disclosed which includes a stacked P+ substrate, n-type epitaxial layer, and one or more p-type epitaxial layers, with a buried layer located in the one or more p-type epitaxial layers to be adjacent to the n-type epitaxial layer, a central isolated region located in the one or more p-type epitaxial layers to be positioned over the buried layer, one or more concentric shallow isolation ring structures positioned to surround the central isolated region and to extend down through the buried layer and into the n-type epitaxial layer, and a concentric deep poly isolation structure positioned to surround the central isolated region and the one or more concentric shallow isolation ring structures and to extend down through the n-type epitaxial layer and into the P+ substrate, wherein the concentric deep poly isolation structure include one or more polysilicon layers that are shorted to the P+ substrate.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA