Fotomaskenrohling und Verfahren zur Herstellung einer Fotomaske

Details

Veröffentlichungs-Nr.

EP4756533

Anmeldetag

1. Dezember 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

IPC

G03F1/24, G03F1/50, G03F1/80

Abstract

The purpose of the present invention is to provide a photomask blank with which a process for removing a hard mask film can be simplified and eventually a mask manufacturing process can be simplified. The photomask blank includes: a substrate; a patterning layer formed of a single layer or multiple layers on the substrate; and a hard mask film on the patterning layer. The hard mask film is made of a material containing chromium and at least one element selected from nitrogen, carbon, and oxygen, a film density of the hard mask film is 6.0 g/cm³ or less, the hard mask film has resistance to dry-etching using a gas containing fluorine and not containing oxygen, and resistance to dry-etching using a gas containing chlorine and not containing oxygen, and the photomask blank satisfies the following formula (1): d/v ≤ 60 [min] (1), wherein a film thickness reduction amount per minute of the hard mask film when processed with a sulfuric acid-hydrogen peroxide mixture is v [nm/min] and a film thickness of the hard mask film is d [nm].

Anmelder

Firma

SHIN-ETSU CHEMICAL CO., LTD.

Land

🇯🇵 Japan