Quantenvorrichtung und Herstellungsverfahren für Mehrschichtige Leiterplatte

Details

Veröffentlichungs-Nr.

EP4756869

Anmeldetag

28. Juli 2023

Veröffentlichung

6. Februar 2025

Rechtsraum

EP

Abstract

A quantum device includes a multilayer wiring substrate including a first wiring including a superconducting material, a second wiring including a normal conducting material, and a via connected to the second wiring and including a normal conducting material, and a quantum chip provided on a first surface of the multilayer wiring substrate and electrically connected to the first wiring and the via, wherein the via is formed so as to penetrate from the first surface to a second surface of the multilayer wiring substrate, and the second wiring is formed so as to be exposed on the second surface of the multilayer wiring substrate. This makes it possible to reduce the loss of the high frequency signal while ensuring the coolability of the quantum device.

Anmelder

Firma

FUJITSU LIMITED

Land

🇯🇵 Japan