Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP4757521

Anmeldetag

16. Oktober 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

IPC

H10B12/00

Abstract

A memory device according to embodiments of the present disclosure may comprise a word line buried in a substrate and extending in a first direction, a bit line contact disposed between word lines, contacting an active area of the substrate, and having at least a portion of a side surface concave toward a center in a second direction perpendicular to the first direction, and a gate capping layer including a first capping portion contacting an upper surface of the word line and a second capping portion positioned on the first capping portion, overlapping with at least a portion of the side surface of the bit line contact in the second direction, and having a width different from a width of the first capping portion.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea