Feldeffekttransistor
Anmelder: DENSO CORPORATION 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4757529
- Anmeldetag
- 20. Mai 2024
- Veröffentlichung
- 6. Februar 2025
- Rechtsraum
- EP
- IPC
- H10D30/60, H10D62/80
Abstract
A recovery current is suppressed in a field-effect transistor having a deep layer. In the field-effect transistor, when a semiconductor substrate is viewed from above, contact layers are arranged at interval in a specific direction parallel to trenches in each inter-trench region. When the semiconductor substrate is viewed from above, deep layers are arranged at interval in the specific direction in each inter-trench region. In each inter-trench region, each interval between the contact layers is located above a corresponding one of the deep layers. In each inter-trench region, each interval between the deep layers is located below a corresponding one of the contact layers.
Anmelder
- Firma
- DENSO CORPORATION
- Land
- 🇯🇵 Japan
Japanischer Automobilzulieferer mit Sitz in Kariya (Präfektur Aichi). Denso entwickelt Antriebs, Klima, Sicherheits und Elektroniksysteme für Fahrzeuge sowie Komponenten für Elektromobilität, Fahrerassistenz und Halbleitertechnik.
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