Hochleistungsschalter mit Verbesserter Lawinendurchbruchspannung durch Bohrlochblockierung

Details

Veröffentlichungs-Nr.

EP4757531

Anmeldetag

1. Dezember 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

Abstract

A high power switch is described with improved avalanche breakdown voltage using well blocking. In an example, a semiconductor switch includes a substrate of a first type, a deep well of a second type over the substrate, an inner well of the first type over the deep well, a gate over the top surface and over the inner well, a source over the inner well having a contact of a second type coupled to the gate through the inner well, and a drain over the inner well having a contact of the second type coupled to the gate through the inner well. An inner moat is outside of the inner well and over the deep well surrounding the gate, the source, the drain, and the body electrode. An outer moat is outside the deep well over the substrate and surrounding a contact well.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande