Vertikale Galliumnitridtransistoren

Details

Veröffentlichungs-Nr.

EP4757532

Anmeldetag

4. Dezember 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

Abstract

Vertical gallium nitride (GaN) field effect transistors (FETs) are presented herein. A vertical GaN FET includes cylindrical trench gates arranged in a hexagonal array to form vertical FET channels. At the surface of the vertical GaN FET is a source layer formed in a GaN epitaxial layer and over a GaN substrate. A channel may be formed between the cylindrical gates in the form of a "GaN pillar"; and FET characteristics, including threshold voltage, may be determined, at least in part by a trench nearest neighbor distance. Accordingly, the trench nearest neighbor distance may be selected so that the vertical GaN FET operates as either an enhancement mode or a depletion mode transistor.

Anmelder

Firma

Power Integrations, Inc.

Land

🇺🇸 USA