Diodenstruktur mit Benachbarten Basiszonen

Details

Veröffentlichungs-Nr.

EP4757535

Anmeldetag

24. November 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

IPC

H10D89/60

Abstract

Techniques for protecting integrated circuits from electrostatic discharge (ESD). A diode structure includes multiple emitter, base, and collector connections across a substrate. The connections are made to either n-doped substrate regions (for collector and emitter in NPN diode) or p-doped regions (for the base in NPN diode). P-doped base regions are arranged adjacent to each other in the substrate and are separated by a dielectric wall (e.g., shallow trench isolation). N-doped emitter regions may be arranged between sets of p-doped base regions. This arrangement effectively enlarges the base area of the diode structure, which decreases the current density. Additionally, the adjacent base regions allow for a wider metal interconnect layer over the adjacent base regions and a greater spacing between adjacent base and emitter interconnect layers. PNP diode structure is similarly configured, but with the dopant scheme reversed (p-doped substrate regions for collector and emitter and n-doped regions for base).

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA