Halbleiterbauelement mit Eingebettetem Chip und Verfahren dafür

Details

Veröffentlichungs-Nr.

EP4757573

Anmeldetag

20. November 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

Abstract

A method of forming a semiconductor device with an embedded die is provided. The method includes forming a cavity at a first major side of a glass substrate. A reduced thickness portion of the glass substrate remaining between a bottom of the first cavity and a second major side of the glass substrate. A plurality of first through glass vias (TGV) and a plurality of second TGV are formed through the reduced thickness portion of the glass substrate. The glass substrate is placed over a semiconductor die having a plurality of copper pillars formed on respective bond pads. The semiconductor die is positioned within the first cavity such that the plurality of copper pillars extend through respective first TGV. A bonding material is injected into the cavity such that space remaining between the glass substrate and the semiconductor die is substantially filled.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande