Wafer mit einer Mehrschichtigen Struktur und Verfahren zur Herstellung eines Wafers mit einer Mehrschichtigen Struktur

Details

Veröffentlichungs-Nr.

EP4760775

Anmeldetag

11. Dezember 2024

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

A wafer comprising a multilayered structure, wherein the multilayered structure comprises in this ordera silicon substrate;a buffer structure; andone or more monocrystalline device layers having a total thickness of not less than 80 nm and not more than 1000 nm and comprising at least one GaN layer;the buffer structure comprising in this orderat least one AIN nucleation layer;an Al_zGa_1-zN layer;at least one superlattice structure comprising 20 to 120 periods, each period consisting of a layer of Al_xGa_1-xN and a layer of Al_yGa_1-yN; anda monocrystalline GaN buffer layer having a carbon concentration of not less than 1 × 10¹⁸ cm^-3 and not more than 1 × 10²⁰ cm^-3 and a thickness of not less than 0.5 µm and not more than 4 µm;wherein 0.3≤z≤0.7; 0.6≤x≤1.0; and 0≤y≤0.4; andcharacterized in thatat least one of the at least one superlattice structure comprises carbon in a concentration of not less than 1 × 10¹⁷ cm^-3 and not more than 1 × 10²⁰ cm^-3, andthe buffer structure comprises islands having a layered structure and consisting of alternating layers of Al_xGa_1-xN and Al_yGa_1-yN, the islands being located in-between the Al_zGa_1-zN layer and the at least one superlattice structure consisting of alternating layers of Al_xGa_1-xN and Al_yGa_1-yN.

Anmelder

Firma

Siltronic AG

Land

🇩🇪 Deutschland