Hochfrequenzleistungsverstärker und Leistungsverstärkervorrichtungen mit Impedanzanpassungsschaltungen

Details

Veröffentlichungs-Nr.

EP4761103

Anmeldetag

13. Dezember 2024

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

A radio frequency (RF) power amplifier (100, 200) and a packaged power amplifier device include a transistor (130, 230, 530) and an input impedance matching circuit (110, 210, 310) coupled between an amplifier input and an input terminal of the transistor. The input impedance matching circuit includes first, second, third, and fourth inductive elements (111, 112, 113, 114, 211, 212, 213, 214, 411, 412, 413, 414) coupled in series, with first, second, third intermediate nodes (118, 119, 120, 218, 219, 220, 418, 419, 420) between adjacent inductive elements. First, second, and third capacitors (115, 116, 117, 215, 216, 217, 415, 416, 417) are coupled between the first, second, and third intermediate nodes, respectively, and a ground reference node.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA