Halbleitervorrichtung und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP4761494

Anmeldetag

10. November 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

IPC

H10B12/00

Abstract

A semiconductor device including high-integrated memory cells and a method for fabricating the semiconductor device are provided. The method for fabricating a semiconductor device includes forming an alternating stack of sacrificial pad sheets and inter-pad dielectric layers, which are stacked vertically spaced apart from each other over a substrate; forming preliminary contact holes penetrating the alternating stack; forming sacrificial plugs filling the preliminary contact holes; performing post-treatment processes on the sacrificial plugs and forming sacrificial plug patterns having different heights and sacrificial recesses having different depths; forming contact liner layers on sidewalls of the sacrificial recesses; removing the sacrificial plug patterns and forming contact holes; forming contact plugs filling the contact holes; removing the sacrificial pad sheets and forming pad openings; and forming each pad of a plurality of pads in a different one of the pad openings.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea