Source/drain-Kontakte mit Schnittstellenauskleidungen und Kappenmaterialien in Integrierten Schaltungsstrukturen

Details

Veröffentlichungs-Nr.

EP4761504

Anmeldetag

28. November 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

Disclosed herein are S/D contact metallization techniques for integrated circuit (IC) structures, and related methods and devices. In one aspect, an IC structure fabricated using the S/D contact metallization method described herein may include a transistor including a region, where the region may be either a source region or a drain region of the transistor, and the IC structure may further include a contact structure in conductive contact with the region. In such an IC structure, the contact structure may include a layer (350) including a first metal, a fill material (364) including a second metal, and a semiconductor material (360) at the at least a portion of an interface between the layer and the fill material.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA