Mosfet mit Monolithisch Integrierter Strommessung
Anmelder: Semiconductor Components Industries, LLC 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4761507
- Anmeldetag
- 4. Dezember 2025
- Veröffentlichung
- 17. Juni 2026
- Rechtsraum
- EP
Abstract
A MOSFET device is disclosed. The MOSFET devices includes a MOSFET and a sense-FET monolithically integrated on a semiconductor die. A gate pad coupled to a MOSFET gate and a sense-FET gate, and a drain pad is coupled to a MOSFET drain and a sense-FET drain. The MOSFET device further includes a first source metal located above a MOSFET active area and coupled to source contacts of the plurality of MOSFET cells, and a source pad formed by a second source metal that is coupled to the first source metal. In addition, the MOSFET device includes a first current-sense metal located above a sense-FET active area and coupled to one or more source contacts of the sense-FET, and also includes a current-sense pad formed by a second current-sense metal that is coupled to the first current-sense metal and extends over a portion of the MOSFET active area.
Anmelder
- Firma
- Semiconductor Components Industries, LLC
- Land
- 🇺🇸 USA
Semiconductor Components Industries, besser bekannt unter der Marke onsemi, ist ein US-amerikanischer Halbleiterhersteller mit Sitz in Arizona. Das Patentportfolio konzentriert sich auf Halbleiter und elektrische Bauelemente sowie Energie- und Schaltungstechnik, ergänzt um Nachrichtentechnik. Anmeldungen decken den Zeitraum 2000 bis 2025 ab.
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