Gate-Metallisierung für Integrierte Schaltungsstrukturen

Details

Veröffentlichungs-Nr.

EP4761508

Anmeldetag

24. November 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

Disclosed herein are gate metallization techniques for integrated circuit (IC) structures, and related methods and devices. In one aspect, a resulting IC structure may include a nanoribbon comprising a semiconductor material, and a P-type transistor comprising a gate electrode at least partially wrapping around a portion of the nanoribbon. In such an IC structure, the gate electrode includes a stack of conductive materials, the stack comprising a first conductive material, a second conductive material, and a third conductive material, wherein the second conductive material is between the first conductive material and the third conductive material and includes titanium.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA