Diffusionsbarriereauskleidung zur Verarbeitung von Nanobandtransistoren

Details

Veröffentlichungs-Nr.

EP4761509

Anmeldetag

28. November 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

Described herein are nanoribbon transistors and processes for forming nanoribbon transistors that include a nitride liner to protect the channel material during an oxide anneal. An oxide may be used to fill trenches between stacks of nanoribbons; the oxide is annealed, and then the oxide is recessed, forming isolation regions. Source and drain regions are formed over the isolation regions. In the resulting devices, the isolation regions have a liner layer that includes nitrogen. An additional oxide liner may be around the nitride liner.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA