Fusionierter Nanobandbasierter Transistor Entlang eines Nanocomb-Transistorbandpfades

Details

Veröffentlichungs-Nr.

EP4761513

Anmeldetag

24. November 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

Examples of integrated circuit (IC) structures with a merged nanoribbon-based transistor along a nanocomb transistor ribbon path are described herein. In one example, an extra wide "merged" nanoribbon-based transistor can be fabricated along the same ribbon path as a nanocomb transistor to take advantage of the area occupied by the spine of the nanocomb transistor in addition to the extra height made available by a double height cell. In one such example, a merged nanoribbon-based transistor can enable higher current while also improving the ratio of active area to dead space in the IC design.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA