Halbleitervorrichtung und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP4765124

Anmeldetag

17. Dezember 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

A semiconductor device including high-integrated memory cells and a method for fabricating the semiconductor device are provided. The semiconductor device includes a first memory cell array including a vertical arrangement of first memory cells, a second memory cell array vertically disposed over the first memory cell array, and including a vertical arrangement of second memory cells, and a dummy memory cell array vertically disposed between the first memory cell array and the second memory cell array, and including a vertical arrangement of dummy memory cells. The first memory cells, the second memory cells and the dummy memory cells have the same structure.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea