In Halbleiterbauelemente Integrierte Wärmeverwaltungsstrukturen

Details

Veröffentlichungs-Nr.

EP4766077

Anmeldetag

27. Oktober 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

Techniques are provided herein to form semiconductor devices with thermal management structures designed to provide additional heat dissipation paths. A semiconductor device includes a gate structure around or otherwise on a semiconductor region that extends from a source region to a drain region. In one example, a subfin region beneath the semiconductor region is removed and replaced with a material having a thermal conductivity of at least 1.5 W/m·K. In another example, a material layer is formed between conductive contacts on the top surfaces of the source and drain regions that has a thermal conductivity of at least 1.5 W/m·K. In another example, the conductive contacts extend through at least 50% of an entire height of the source and drain regions to provide an enhanced thermal path. Any of the above-mentioned structures may also be combined in one or more devices to provide multiple different thermal management structures.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA