Architekturen und Verfahren für Differentielle Cmos-Kontaktprofile

Details

Veröffentlichungs-Nr.

EP4766088

Anmeldetag

17. November 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

Architectures and methods for differential CMOS contact profiles. Architectures include a CMOS isolation layer with a plurality of negative metal oxide semiconductor (NMOS) regions and a plurality of positive metal oxide semiconductor (PMOS) regions. The NMOS regions have a respective NMOS contact characterized by a first cavity formed in an upper surface of the isolation layer, extending orthogonally into the NMOS region to a first depth, and filled with a conductive material. The PMOS regions have a respective PMOS contact characterized by a second cavity formed in the upper surface of the isolation layer, extending orthogonally into the PMOS region to a second depth, and filled with the conductive material. The first depth is more than four times the second depth.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA