Oberwellenfilterschaltung auf dem Chip für Hochfrequenzverstärker

Details

Veröffentlichungs-Nr.

EP4766089

Anmeldetag

17. Dezember 2024

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

A semiconductor die includes a transistor including a source region, a drain region, a channel between the source region and the drain region, and a gate structure overlying the channel. The gate structure is configured to control a conductivity of the channel vis an electrical voltage applied thereto. The semiconductor die includes a first gate terminal electrically connected to the gate structure and a first harmonic filter inductor formed in a body of the semiconductor die. The first harmonic filter inductor is electrically connected to the first gate terminal. The semiconductor die includes a first harmonic filter capacitor formed in the body of the semiconductor die. The first harmonic filter capacitor includes a first capacitor plate electrically connected to the first harmonic filter inductor and a second capacitor plate connected to a ground reference node.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA