Bidirektionale Esd- und Überspannungsschutzvorrichtung
Anmelder: Semiconductor Components Industries, LLC 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4766094
- Anmeldetag
- 4. Dezember 2025
- Veröffentlichung
- 24. Juni 2026
- Rechtsraum
- EP
- IPC
- H10D89/60
Abstract
An ESD protection device is disclosed. The ESD protection device comprises a first bipolar junction transistor including an emitter formed by a substrate having a first conductivity type, an open base formed by a first epitaxial region located above the substrate and having a second conductivity type, and a collector formed by a first well located in the first epitaxial region and having the first conductivity type. The ESD protection device also includes a second bipolar junction transistor having an emitter formed by the substrate, an open base formed by a second epitaxial region located above the substrate and having the second conductivity type, and a collector formed by a second well located in the second epitaxial region and having the first conductivity type. The ESD protection device further includes a trench including a dielectric material and located between the first and second epitaxial regions.
Anmelder
- Firma
- Semiconductor Components Industries, LLC
- Land
- 🇺🇸 USA
Semiconductor Components Industries, besser bekannt unter der Marke onsemi, ist ein US-amerikanischer Halbleiterhersteller mit Sitz in Arizona. Das Patentportfolio konzentriert sich auf Halbleiter und elektrische Bauelemente sowie Energie- und Schaltungstechnik, ergänzt um Nachrichtentechnik. Anmeldungen decken den Zeitraum 2000 bis 2025 ab.
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