Verfahren zur Herstellung eines Silizium-Auf-Isolator-Substrats

Details

Veröffentlichungs-Nr.

EP4766130

Anmeldetag

28. Oktober 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

IPC

H10P90/00

Abstract

According to a method of fabricating an SOI substrate, a stopper layer, a semiconductor layer, a buried insulating layer and a first bonding insulation layer are sequentially formed on a sacrificial wafer. A second bonding insulation layer is formed on a reference wafer. The first and second bonding insulation layers include a Silicon Carbon Nitride (SiCN) material. Si-OH bonds are formed in the first bonding insulation layer and the second bonding insulation layer by an O2 plasma treatment. The sacrificial wafer is bonded to the reference wafer so that the first bonding insulation layer contacts the second bonding insulation layer.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea