Halbleiteranordnung mit einer Kondensatorstruktur Neben einem Aktiven Halbleitergebiet

Details

Veröffentlichungs-Nr.

EP4766135

Anmeldetag

15. Dezember 2025

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

A semiconductor device configured to reduce the size of passive components monolithically integrated with active components includes a semiconductor substrate that includes an active region, a first current-carrying electrode formed in the active region, a second current-carrying electrode formed in the active region, a control electrode configured to control current flow between the first current-carrying electrode and the second current-carrying electrode. A capacitor structure is formed over the semiconductor substrate adjacent the active region. The capacitor structure includes a first capacitor region that includes a portion of a first conductive layer formed over the semiconductor substrate. A first insulating layer is formed over the first capacitor region. A second capacitor region that includes a portion of a second conductive layer is formed over the first insulating layer. In an embodiment, a contact area is coupled to the capacitor structure.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA