Epitaktischer Wafer und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4768647

Anmeldetag

6. August 2024

Veröffentlichung

27. Februar 2025

Rechtsraum

EP

Abstract

The present invention is an epitaxial wafer including, in this order, a silicon epitaxial film having a carbon concentration of 2×10<19> atoms/cm<3> or more and less than 3×10<20> atoms/cm<3> and containing carbon defects and a dielectric layer on a silicon single crystal substrate having a resistivity of 10 Ω·cm or more and 5000 Ω·cm or less, in which a thickness of the silicon epitaxial film satisfies 6.6 × 10<20> × exp{-1.6 × [the thickness of the epitaxial film (µm)]} > [the carbon concentration of the epitaxial film (atoms/cm<3>)]. This provides the silicon epitaxial wafer in which the silicon epitaxial film is formed on a standard-resistivity silicon substrate, the silicon epitaxial wafer having superior capability of reducing harmonics, and excellent processability for use as a substrate for a high-frequency integrated circuit, and further provides the method for manufacturing the same.

Anmelder

Firma

Shin-Etsu Handotai Co., Ltd.

Land

🇯🇵 Japan