Verfahren zur Herstellung eines Strahlungsdetektionselements, Strahlungsdetektionselement und Strahlungsdetektor

Details

Veröffentlichungs-Nr.

EP4768994

Anmeldetag

3. Oktober 2024

Veröffentlichung

17. April 2025

Rechtsraum

EP

IPC

G01T1/24

Abstract

Provided are a method for manufacturing a radiation detection element, a radiation detection element, and a radiation detector make it possible to detect low-energy radiation with high accuracy. The method for manufacturing a radiation detection element includes: forming an oxide layer made of a semiconductor oxide on a first semiconductor layer; forming a second semiconductor layer on the oxide layer; and implanting ions of a dopant, which is for changing the semiconductor forming the first semiconductor layer into a different type of semiconductor, into the first semiconductor layer through the second semiconductor layer and the oxide layer to form a doping layer made of a semiconductor doped with the dopant between the first semiconductor layer and the oxide layer.

Anmelder

Firma

HORIBA, Ltd.

Land

🇯🇵 Japan

Fachgebiete