Nichtflüchtige Speichervorrichtung zur Minimierung des Prellens einer Gemeinsamen Quellenleitung und Betriebsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4769405

Anmeldetag

16. Dezember 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

G11C8/12, G11C16/30

Abstract

A nonvolatile memory device includes N planes each comprising a plurality of memory blocks, N discharge control circuits adjacent to the N planes, respectively, and configured to connect each common source line of the N planes and a ground voltage terminal in response to each one of N discharge control signals, a plane selection circuit configured to select K planes of the N planes, and an operation control circuit configured to adjust voltage levels of K discharge control signals according to a distance difference between the ground voltage terminal and each of K discharge control circuits corresponding to the K planes, among the N discharge control circuits.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea

Fachgebiete