Dreidimensionaler Nand-Speicher und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4769410

Anmeldetag

26. August 2021

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

G11C16/04

Abstract

The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes disposing an alternating dielectric stack over a substrate, wherein the alternating dielectric stack includes first dielectric layers and second dielectric layers alternatingly stacked on the substrate. The method also includes forming a channel structure penetrating through the alternating dielectric stack and extending into the substrate, wherein the channel structure includes a channel layer disposed on a sidewall of a memory film. The method further includes removing the substrate and a portion of the memory film that extends into the substrate to expose a portion of the channel layer; and disposing an array common source (ACS) on the exposed portion of the channel layer.

Anmelder

Firma

Yangtze Memory Technologies Co., Ltd.

Land

🇨🇳 China

Fachgebiete