Halbleitervorrichtung und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP4770304

Anmeldetag

19. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

H10B12/00

Abstract

A semiconductor device including high-integrated memory cells and a method for fabricating the semiconductor device is provided. The semiconductor device includes a vertical arrangement and a horizontal arrangement of nano sheets; horizontal conductive lines that surround the horizontal arrangement of the nano sheets; pads coupled to edge portions of the horizontal conductive lines; inter-pad dielectric layers disposed between the pads; contact plugs each coupled to a different one of the pads; and contact spacers each including a first low-k material and each formed on a sidewall of each of the contact plugs.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea

Fachgebiete