Selbstausgerichteter Metall-Gate-Schnitt zur Ertragsverbesserung

Details

Veröffentlichungs-Nr.

EP4770315

Anmeldetag

7. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

Abstract

Integrated circuit (IC) devices having isolation structures in metal gate cuts. An IC device may include first and second source-drain contacts in first and second transistor structures over a substrate, and a dielectric structure having first and second feet extending into the substrate, between the first and second source or drain contacts, and with a portion of the substrate between the first and second feet. The first and second feet may each have a width approximately equal to a gate length. The portion of the substrate between the first and second feet of the dielectric structure has a width approximately equal to a distance between adjacent gate electrodes. The dielectric structure may be formed in a gate cut by a self-aligned etch following a selective recess of source-drain contacts.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA