Hohlraumabstandshalter für Nanodrahtfeldeffekttransistoren Bsierend auf Selektiver Oxidation

Details

Veröffentlichungs-Nr.

EP4770317

Anmeldetag

25. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

IPC

H10D30/01, H10D30/00

Abstract

Devices, transistor structures, systems, and techniques are described herein related to gate all around field effect transistors having a stack of nanowires (i.e., semiconductor structures) contacted by epitaxial source and drain structures at opposite ends of the nanowires. The transistors include a gate structure vertically between the nanowires. Spacer structures of silicon germanium oxide separate the ends of the nanowires spacer and separate the source and drains structures from the gate structure.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete