Selektive Dipolschichten für Nanodraht-Feldeffekttransistoren

Details

Veröffentlichungs-Nr.

EP4770325

Anmeldetag

6. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

Abstract

Devices, integrated circuit transistor structures, systems, and techniques are described herein related to gate all around field effect transistor circuits having an n-type transistor integrated with a p-type transistor. Each have a stack of nanowires contacted by source and drain structures at opposite ends of the nanowires. The nanowires of the n-type transistor have a layer including lanthanum on the nanowires, and the nanowires of the p-type transistors are absent the layer including lanthanum. The gate structures of the n-type transistor and the p-type transistor have the same gate dielectric, work function metal, and bulk metal.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA