Germaniumreiche Metallkontaktschichten für Pmos-Quellen- und -Drain-Kontakte

Details

Veröffentlichungs-Nr.

EP4770328

Anmeldetag

25. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

Abstract

Outdiffusion of germanium from silicon-germanium source and drain regions of PMOS (p-channel metal-oxide-semiconductor) field effect transistors into metal contact layers located on the PMOS source and drain regions can reduce the concentration of germanium layer in the silicon-germanium in the vicinity of the silicon-germanium layer-metal contact layer interface. This region of reduced germanium concentration can increase the parasitic contact resistance, which can have a deleterious effect on PMOS transistor performance. Adding germanium to the metal contact layers can reduce or eliminate germanium outdiffusion and prevent parasitic contact resistance increases.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA