Strukturen einer Integrierten Gate-All-Around-Schaltung mit Dreidimensionalen (3D) Leitenden Kontakten

Details

Veröffentlichungs-Nr.

EP4770332

Anmeldetag

24. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

Abstract

Gate-all-around integrated circuit structures having three-dimensional (3D) conductive contact structures are described. For example, an integrated circuit structure includes a first vertical stack of horizontal nanowires over a second vertical stack of horizontal nanowires. A first epitaxial source or drain structure is at an end of the first vertical stack of horizontal nanowires. A second epitaxial source or drain structure is at an end of the second vertical stack of horizontal nanowires. The second epitaxial source or drain structure is vertically beneath the first epitaxial source or drain structure. A conductive contact structure is through the first epitaxial source or drain structure and extending only partially into the second epitaxial source or drain structure.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA