Integrierte Schaltungsstrukturen mit Gleichförmigem Metallgate-Gitter und Grabenkontaktplatzhalterschnitt mit Direktem Strukturiertem Grabenkontakt und Nichtselektiver Fin-Trimm-Isolierung

Details

Veröffentlichungs-Nr.

EP4770333

Anmeldetag

25. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

Abstract

Integrated circuit structures having uniform grid metal gate and trench contact placeholder cut and non-selective fin trim isolation (FTI) are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin. A gate structure is over the vertical stack of horizontal nanowires or the fin. A dielectric structure is laterally spaced apart from the gate structure. The dielectric structure is not over a channel structure. A dielectric gate cut plug is laterally between and in contact with the gate structure and the dielectric structure. The dielectric structure has an uppermost surface above an uppermost surface of the dielectric gate cut plug.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA