Chipstruktur und Herstellungsverfahren dafür sowie Anzeigesubstrat
Anmelder: BOE Technology Group Co., Ltd., Beijing BOE Technology Development Co., Ltd. 🇨🇳
Details
- Veröffentlichungs-Nr.
- EP4770352
- Anmeldetag
- 19. Dezember 2023
- Veröffentlichung
- 26. Juni 2025
- Rechtsraum
- EP
Abstract
The present application belongs to the technical field of displays. Disclosed are a chip structure and a manufacturing method therefor, and a display substrate. The chip structure comprises: a first substrate, a light-emitting unit, a color conversion unit and a surrounding dam layer. The surrounding dam layer can be arranged around the light-emitting unit, and the maximum distance between the surface of the surrounding dam layer facing away from the color conversion unit and the first substrate is greater than or equal to the maximum distance between the surface of a first semiconductor layer in the light-emitting unit facing away from the first substrate and the first substrate. Therefore, after a light waveguide phenomenon occurs inside the first semiconductor layer, light transmitted transversely within the first semiconductor layer can be blocked by the surrounding dam layer after being emitted from any position on the edge, such that the probability of light leakage in the chip structure can be effectively reduced, resulting in a better display effect of the display substrate, which is integrated with the chip structure.
Anmelder
- Firmen
- BOE Technology Group Co., Ltd.
Beijing BOE Technology Development Co., Ltd. - Land
- 🇨🇳 China
Chinesischer Elektronikkonzern mit Sitz in Peking, entwickelt und fertigt Display-Technologien wie LCD- und OLED-Bildschirme für Endgeräte und Industrieanwendungen.
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