Soi-Wafer und Verfahren zu Seiner Herstellung

Details

Veröffentlichungs-Nr.

EP4770401

Anmeldetag

6. August 2024

Veröffentlichung

27. Februar 2025

Rechtsraum

EP

Abstract

The present invention is an SOI wafer including, in this order, a silicon epitaxial film having a carbon concentration of 2×10<19> atoms/cm<3> or more and less than 3×10<20> atoms/cm<3> and containing carbon defects, a dielectric layer, and a silicon single crystal film on a silicon single crystal substrate having a resistivity of 10 Ω·cm or more and 5000 Ω·cm or less, in which a thickness of the silicon epitaxial film satisfies 6.6 × 10<20> × exp{-1.6 × [the thickness of the epitaxial film (µm)]} > [the carbon concentration of the epitaxial film (atoms/cm<3>) ]. This provides the SOI wafer employing an epitaxial wafer having the silicon epitaxial film containing a high concentration of carbon formed on a standard resistivity substrate, the SOI wafer having superior harmonic reduction capability compared with a conventional SOI wafer that employs a polysilicon layer as a trap-rich layer, and being excellent in terms of ease of processing for use as a substrate for a high-frequency integrated circuit, as well as a method for manufacturing the same.

Anmelder

Firma

Shin-Etsu Handotai Co., Ltd.

Land

🇯🇵 Japan