Source-/drain-Material für Dielektrische Grabenstopfen aus Rückseitiger Metallisierung

Details

Veröffentlichungs-Nr.

EP4770405

Anmeldetag

25. November 2025

Veröffentlichung

1. Juli 2026

Rechtsraum

EP

Abstract

Transistor structures with a dielectric trench plug below source and drain semiconductor material. Following frontside processing, a workpiece may be inverted and backside interconnect metallization fabricated. The dielectric trench plug can electrically insulate the backside interconnect metallization from source and drain semiconductor material. In some examples, a dielectric trench plug is formed during frontside processing, backfilling a trench in subfin semiconductor material prior to the deposition of source and drain semiconductor material. In other examples, a dielectric trench plug is formed during backside processing. When source or drain semiconductor material is exposed with a backside planarization polish, a recess may be etched in the exposed semiconductor material and the recess backfilled with the dielectric trench plug.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA