Diamantverarbeitungsverfahren

Details

Veröffentlichungs-Nr.

EP4772679

Anmeldetag

29. August 2024

Veröffentlichung

6. März 2025

Rechtsraum

EP

Abstract

In a method of processing a diamond substrate, a laser condenser 190 is arranged to face a main surface 10a of a {001} plane of a substrate 10; a first starting point 221 and a second starting point 222 formed of processing marks 21 are formed by emitting laser light B to irradiate positions each set on a first crystal face 111 and a second crystal face 112 that form a wedge structure with a tip that becomes thinner toward the main surface 10a inside the substrate 10, among crystal faces constituting a {111} plane; starting points are formed on the processing marks 21 formed by irradiating the first starting point 221 and the second starting point 222 with the laser light B in a superimposed manner; and processing marks are formed by irradiating positions between the first starting point 221 and the second starting point 222 with laser light so that cleavages generated from the first starting point 221 and the second starting point 222 obtained by irradiation with the laser light B in a superimposed manner each extend along the first crystal face 111 and the second crystal face 112 and are connected at a tip of the wedge structure.

Anmelder

Firmen

Shin-Etsu Polymer Co., Ltd.
SHIN-ETSU CHEMICAL CO., LTD.
National University Corporation Saitama University

Land

🇯🇵 Japan