Halbleiterbauelement mit Wasserstofferfassungsstruktur

Details

Veröffentlichungs-Nr.

EP4772868

Anmeldetag

27. Oktober 2025

Veröffentlichung

8. Juli 2026

Rechtsraum

EP

IPC

G01N27/12

Abstract

A semiconductor device includes an integrated circuit structure disposed over a substrate and a hydrogen sensing structure disposed over the substrate to be laterally spaced apart from the integrated circuit structure. The integrated circuit structure includes an oxide semiconductor layer. The hydrogen sensing structure includes a hydrogen ion sensing layer containing a resistance change material, and a first sensing electrode layer and a second sensing electrode layer disposed at opposite ends of the hydrogen ion sensing layer. A bottom surface and a top surface of the hydrogen ion sensing layer are arranged to have same levels as a bottom surface and a top surface of the oxide semiconductor layer based on the surface of the substrate, respectively.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea

Fachgebiete