Nichtflüchtige Speichervorrichtung und Steuerungsverfahren

Details

Veröffentlichungs-Nr.

EP4773141

Anmeldetag

22. Oktober 2019

Veröffentlichung

8. Juli 2026

Rechtsraum

EP

IPC

G11C16/34

Abstract

A non-volatile memory device and a control method are provided e disclosed. The non-volatile memory device includes a memory array, a bit line, a plurality of word lines, a first control circuit, and second control circuit. The bit line is connected to a first memory string of the memory array. The plurality of word lines are connected to memory cells of the first memory string and each word line is connected to a respective memory cell. The first control circuit is configured to apply a bit line pre-pulse signal to the bit line during a pre-charge period. The second control circuit is configured to apply a word line signal to a selected word line and apply a plurality of word line pre-pulse signals to word lines disposed between a select gate line and the selected word line. Voltage levels of the plurality of word line pre-pulse signals are incremental.

Anmelder

Firma

Yangtze Memory Technologies Co., Ltd.

Land

🇨🇳 China

Fachgebiete