Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Details

Veröffentlichungs-Nr.

EP4773753

Anmeldetag

22. Oktober 2025

Veröffentlichung

8. Juli 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a gate structure including a source select line, a drain select line, and word lines stacked between the source select line and the drain select line; a second channel layer penetrating through the source select line and including polysilicon; a third channel layer penetrating through the drain select line and including polysilicon; a first channel layer penetrating through the word lines, connected between the second channel layer and the third channel layer, and including molybdenum disulfide (MoS₂); and an insulating core disposed inside the first channel layer.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea