Seitenwandstrukturen für Speicherzellen in Vertikalen Strukturen

Details

Veröffentlichungs-Nr.

EP4773798

Anmeldetag

17. Mai 2022

Veröffentlichung

8. Juli 2026

Rechtsraum

EP

IPC

H10W90/28

Abstract

A method, comprising:forming a stack of alternating layers on a substrate, the substrate defining a plane in a first direction and a second direction, and the substrate extending in a third direction orthogonal to the plane, wherein the stack of alternating layers comprises conductive materials and dielectric materials;etching the stack of alternating layers to form a plurality of cavities;depositing a chalcogenide material into a cavity of the plurality of cavities to form a self-selecting storage element that is in contact with a first conductive material of the conductive materials and two dielectric materials of the dielectric materials and that comprises a bulk region comprising the chalcogenide material having a first composition and a sidewall region comprising the chalcogenide material having a second composition that is different than the first composition; anddepositing a second conductive material that contacts the sidewall region of the chalcogenide material, at least a portion of the sidewall region extending between the first conductive material and the second conductive material in the first direction parallel to the plane defined by the substrate.

Anmelder

Firma

MICRON TECHNOLOGY, INC.

Land

🇺🇸 USA

Fachgebiete