Epitaxialschicht auf Direktgebondeten Substraten und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP4775720

Anmeldetag

12. Januar 2026

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

Abstract

The present disclosure is directed to a stacked assembly including a polycrystalline Silicon Carbide (SiC) substrate on which a monocrystalline SiC layer and one or more epitaxial layers are stacked. The one or more epitaxial layers are completely separated from the polycrystalline SiC substrate by the monocrystalline layer, which is stacked on the polycrystalline SiC substrate such that the monocrystalline SiC layer is between the one or more epitaxial layers and a respective surface of the polycrystalline SiC substrate. The present disclosure is further directed to one or more embodiments of methods of manufacturing one or more embodiments of the stacked assemblies.

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz