Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP4776780

Anmeldetag

3. November 2025

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

IPC

H10B12/00, H10D84/83

Abstract

A memory device according to some embodiments of the present disclosure may comprise a substrate including a cell region and a peripheral region, a first transistor disposed in the peripheral region of the substrate, the first transistor comprising a first gate insulating layer, a first gate electrode, and a first gate capping layer and a second transistor disposed in the peripheral region of the substrate, the second transistor comprising a semiconductor layer, a second gate insulating layer having a lower surface positioned higher than a lower surface of the first gate insulating layer, a second gate electrode, and a second gate capping layer having an upper surface positioned at the same height as an upper surface of the first gate capping layer.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea

Fachgebiete